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VINSE - Vanderbilt Institute of Nanoscale Science and Engineering

VINSE - Vanderbilt Institute of Nanoscale Science and Engineering
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Daniel M. Fleetwood

Olin H. Landreth Professor of Engineering
Professor of Electrical and Computer Engineering
Professor of Physics

Overview:

Daniel M. Fleetwood received his B. S., M. S., and Ph. D. degrees in Physics from Purdue University in 1980, 1981, and 1984. Dan joined Sandia National Laboratories in Albuquerque, New Mexico, in 1984, and was named a Distinguished Member of the Technical Staff in the Radiation Technology and Assurance Department in 1990. In 1999 he left Sandia to accept the position of Professor of Electrical Engineering at Vanderbilt University in Nashville, Tennessee. 

In 2000, he was also named a Professor of Physics, in 2001 he was appointed Associate Dean for Research of the Vanderbilt School of Engineering, and in 2003-2010 he served as Chair of the Electrical Engineering and Computer Science Department. Dan is the author of more than 500 publications on radiation effects in microelectronics, 12 of which have been recognized with Outstanding Paper Awards. These papers have been cited more than 24,000 times (citation h factor = 85, Google Scholar). A recent review article on "Radiation Effects in a Post-Moore World" can be found on IEEE Xplore at https://ieeexplore.ieee.org/document/9335298. In 2009, he received the IEEE Nuclear and Plasma Sciences Society’s Merit Award, which is the society’s highest individual technical honor. Dan is a Fellow of the Institute for Electrical and Electronics Engineers, The American Physical Society and the American Association for the Advancement of Science, and a member of ASEE, Phi Beta Kappa, and Sigma Pi Sigma.

Awards:

• IEEE NPSS Merit Award – this is the top technical award given by IEEE NPSS, for lifetime achievement, 2009
• Fellow, IEEE (M 87, SM 90, Fellow 1997)
• Fellow of The American Physical Society, November 2001
• Fellow of The American Association for the Advancement of Science, October 2019
• Outstanding (O)/Meritorious (M) Student (S: as co-author) Conference Paper Awards: 28
• Member, Phi Beta Kappa (National Honorary), Sigma Pi Sigma (National Physics Honorary), Phi Kappa Phi (National Honorary)
• Purdue University, College of Science, Distinguished Alumni Award, 2007
• Chancellor’s Research Award, 2002
• Named one of Top 250 most highly cited researchers in Engineering (1981-1999) by Inst. for Scientific Information, 2000
• Discover Magazine (1998), R&D Magazine “R&D 100” (1997) and Industry Week “Technology of Year” (1997) Awards, for co-invention of protonic nonvolatile field effect transistor memory (patent issued 11/3/1998)
• Named Distinguished Member of Technical Staff, Sandia National Laboratories, 1990

Selected Publications:

Defects and low-frequency noise in irradiated black phosphorus MOSFETs with HfO2 gate dielectrics. Liang, CD; Ma, R; Su, Y; O'Hara A; Zhang, X; Alles, ML; Wang, P; Zhao, SE; Pantelides, ST: Koester, SJ; Schrimpf, RD; and Fleetwood, DM, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 65, 1227-1238 , (2018)

Evolution of total ionizing dose effects in MOS devices with Moore’s Law scaling. Fleetwood, DM, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 65, 1465-1481 , (2018)

Influence of LDD spacers and H+ transport on the total-ionizing-dose response of 65 nm MOSFETs irradiated to ultrahigh doses. Faccio, F; Borghello, G; Lerario, E; Fleetwood, DM; Schrimpf, RD; Gong, H; Zhang, X; Wang, P; Michelis, S; Gerardin, S; Paccagnella, A; Bonaldo, S, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 65, 164-174 , (2018)

1/f Noise and Defects in Microelectronic Materials and Devices. Fleetwood, DM, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 62, 1462-1486 , (2015) View Abstract

Total Ionizing Dose Effects in MOS and Low-Dose-Rate-Sensitive Linear-Bipolar Devices. Fleetwood, DM, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 60, 1706-1730 , (2013) View Abstract