Personnel

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Ronald Schrimpf

Ronald D. Schrimpf

Orrin Henry Ingram Professor of Engineering
Professor of Electrical and Computer Engineering
Founding Director, Institute for Space and Defense Electronics
5635 Stevenson Center
615-343-0507
Email

Overview

Ron Schrimpf was the founding director of the Institute for Space and Defense Electronics, which focuses on issues associated with using electronic devices in harsh environments. He works on semiconductor device physics, including designing, characterizing and simulating devices with nanometer scale feature sizes. The technologies with which he works include silicon FinFETs, ultra-thin silicon on insulator, GaN, and two-dimensional materials.

Awards

-IEEE Nuclear and Plasma Sciences Society Merit Award, 2021
-Chancellor’s Cup, 2010
-Harvey Branscomb Distinguished Professor Award, 2008-2009
-Orrin Henry Ingram Professor of Engineering, 2008-present
-Chancellor’s Award for Research, 2003
-Fellow of the IEEE, 2000
-IEEE Nuclear and Plasma Sciences Society Early Achievement Award, 1996
-Eight outstanding paper awards

Selected Publications

First-principles approach to closing the 10--100 eV gap for charge-carrier thermalization in semiconductors. Nielsen DO, Van de Walle CG, Pantelides ST, Schrimpf RD, Fleetwood DM, Fischetti MV, Physical Review B, 108, 155203, (2023) View Abstract

Impact of Heavy-Ion Range on Single-Event Effects in Silicon Carbide Power Junction Barrier Schottky Diodes. Sengupta A, Ball DR, Witulski AF, Zhang EX, Schrimpf RD, Galloway KF, Reed RA, Alles ML, McCurdy MW, Sternberg AL, Johnson RA, Howell ME, Osheroff JM, Hutson JM, IEEE Transactions on Nuclear Science, 70, 394-400, (2023) View Abstract

Low-Energy Ion-Induced Single-Event Burnout in Gallium Oxide Schottky Diodes. Cadena RM, Ball DR, Zhang EX, Islam S, Senarath A, McCurdy MW, Farzana E, Speck JS, Karom N, O’Hara A, Tuttle BR, Pantelides ST, Witulski AF, Galloway KF, Alles ML, Reed RA, Fleetwood DM, Schrimpf RD, IEEE Transactions on Nuclear Science, 70, 363-369, (2023) View Abstract

Negative Bias-Temperature Instabilities and Low-Frequency Noise in Ge FinFETs. Luo X, Zhang EX, Wang PF, Li K, Linten D, Mitard J, Reed RA, Fleetwood DM, Schrimpf RD, IEEE Transactions on Nuclear Science, 23, 153+161, (2023) View Abstract

Total-Ionizing-Dose Effects on 3-D Sequentially Integrated FDSOI Ring Oscillators. Toguchi S, Zhang EX, Fleetwood DM, Schrimpf RD, Moreau S, Batude P, Brunet L, Andrieu F, Alles ML, IEEE Transactions on Nuclear Science, 70, 627-633, (2023) View Abstract

Education

Ph.D., Electrical Engineering, University of Minnesota, 1986

M.S.E.E., Electrical Engineering, University of Minnesota, 1984

B.E.E., Electrical Engineering, University of Minnesota, 1981