Abstract
IEEE Transactions on Nuclear Science 2023, 23, 153+161
Negative Bias-Temperature Instabilities and Low-Frequency Noise in Ge FinFETs
Luo X, Zhang EX, Wang PF, Li K, Linten D, Mitard J, Reed RA, Fleetwood DM, Schrimpf RD
Negative bias-temperature instabilities and low-frequency noise are investigated in strained Ge p MOS FinFETs with SiO textsubscript 2/HfO textsubscript 2 gate dielectrics. The extracted activation energies for NBTI in Ge p MOS FinFETs are smaller than for Si p MOSFETs. Low-frequency noise magnitudes at lower temperatures are unaffected by negative-bias-temperature stress (NBTS), but increase significantly for temperatures above ?230 K. The increased noise due to NBTS is attributed primarily to the activation of oxygen vacancies and hydrogen-related defects in the SiO2 and HfO2 layers.