Overview
The internet of things is the
climax of the technology era where different devices share and record their
perception of the surroundings. With this new paradigm of sharing comes a need
for ubiquitous materials and devices that can perform reliably in harsh
environments. This combination of functionalities necessitates moving away from
monolithic Si electronics and consequently combining heterogeneous electronic
systems of diverse materials. 2D materials and wide-bandgap semiconductors
offer solutions where Si cannot. I have over a dozen patents and several
publications in these different technologies that reflect a diverse school of
thought and dynamic research methodology. Armed with this knowledge, my
research group innovates and develops new building blocks for standalone IoT
technology from different types of emerging materials and capitalizes on their
unique and overlooked properties. Under my leadership, I envision developing
multiple techniques to fabricate and evaluate biological and chemical sensors that
can be heterogeneously integrated with efficient power management devices on
foundry compatible chiplets.
Awards
-Selected to participate at the NextProf Nexus Workshop, 2019
-Awarded National Research Council Fellowship, 2019
-IBM Recognition Center 3rd Invention Plateau, 2019
-IBM Recognition Center 2nd Invention Plateau, 2017
-IBM Recognition Center 1st Invention Plateau, 2017
-Best lightning talk at 10th Albany Nanotechnology Symposium, 2016
-Fulbright Scholarship that covered Master of Science, 2009-2011
Selected Publications
Study of anode doping and avalanche in foundry compatible 1.2 kV vertical GaN PiN diodes. Ebrish MA, Porter M, Jacobs A, Gallagher JC, Kaplar RJ, Gunning BP, Hobart KD, Anderson TJ, Applied Physics Express, 16, 116501, (2023) View Abstract
Using machine learning with optical profilometry for GaN wafer screening. Gallagher JC, Mastro MA, Ebrish MA, Jacobs AG, Gunning BP, Kaplar RJ, Hobart KD, Anderson TJ, Scientific Reports, 13, 3352, (2023) View Abstract
Impact of Anode Thickness on Breakdown Mechanisms in Vertical GaN PiN Diodes with Planar Edge Termination. Ebrish MA, Porter MA, Jacobs AG, Gallagher JC, Kaplar RJ, Gunning BP, Hobart KD, Anderson TJ, Crystals, 12, 623, (2022) View Abstract
Optimizing performance and yield of vertical GaN diodes using wafer scale optical techniques. Gallagher JC, Ebrish MA, Porter MA, Jacobs AG, Gunning BP, Kaplar RJ, Hobart KD, Anderson, TJ, Scientific Reports, 12, 658, (2022) View Abstract
Process Optimization for Selective Area Doping of GaN by Ion Implantation. Ebrish MA, Anderson TJ, Jacobs AG, Gallagher JC, Hite JK, Mastro MA, Feigelson BN, Wang YK, Liao MCE, Goorsky M, Hobart, KD, Journal of Electronic Materials, 50, 4642-4649, (2021) View Abstract
Education
Ph.D., Electrical Engineering, University of MinnesotaM.S., Electrical Engineering, University of Minnesota
B.S., Electrical Engineering, Al Fateh University