Overview
The internet of things is the climax of the technology era where different devices share and record their perception of the surroundings. With this new paradigm of sharing comes a need for ubiquitous materials and devices that can perform reliably in harsh environments. This combination of functionalities necessitates moving away from monolithic Si electronics and consequently combining heterogeneous electronic systems of diverse materials. 2D materials and wide-bandgap semiconductors offer solutions where Si cannot. I have over a dozen patents and several publications in these different technologies that reflect a diverse school of thought and dynamic research methodology. Armed with this knowledge, my research group innovates and develops new building blocks for standalone IoT technology from different types of emerging materials and capitalizes on their unique and overlooked properties. Under my leadership, I envision developing multiple techniques to fabricate and evaluate biological and chemical sensors that can be heterogeneously integrated with efficient power management devices on foundry compatible chiplets.
Awards
-Selected to participate at the NextProf Nexus Workshop, 2019
-Awarded National Research Council Fellowship, 2019
-IBM Recognition Center 3rd Invention Plateau, 2019
-IBM Recognition Center 2nd Invention Plateau, 2017
-IBM Recognition Center 1st Invention Plateau, 2017
-Best lightning talk at 10th Albany Nanotechnology Symposium, 2016
-Fulbright Scholarship that covered Master of Science, 2009-2011
Selected Publications
Impact of Anode Thickness on Breakdown Mechanisms in Vertical GaN PiN Diodes with Planar Edge Termination. Ebrish, MA; Porter, MA; Jacobs, AG; Gallagher, JC; Kaplar, RJ; Gunning, BP; Hobart, KD; Anderson, TJ, CRYSTALS, 12, 623 , (2022) View Abstract
Optimizing performance and yield of vertical GaN diodes using wafer scale optical techniques. Gallagher, JC; Ebrish, MA; Porter, MA; Jacobs, AG; Gunning, BP; Kaplar, RJ; Hobart, KD; Anderson, TJ, SCIENTIFIC REPORTS, 12, 658 , (2022) View Abstract
Process Optimization for Selective Area Doping of GaN by Ion Implantation. Ebrish, MA; Anderson, TJ; Jacobs, AG; Gallagher, JC; Hite, JK; Mastro, MA; Feigelson, BN; Wang, YK; Liao, MCE; Goorsky, M; Hobart, KD, JOURNAL OF ELECTRONIC MATERIALS, 50, 4642-4649 , (2021) View Abstract
Education
Ph.D., Electrical Engineering, University of MinnesotaM.S., Electrical Engineering, University of Minnesota
B.S., Electrical Engineering, Al Fateh University