Abstract
Applied Physics Express 2023, 16, 116501
Study of anode doping and avalanche in foundry compatible 1.2 kV vertical GaN PiN diodes
Ebrish MA, Porter M, Jacobs A, Gallagher JC, Kaplar RJ, Gunning BP, Hobart KD, Anderson TJ
Foundry compatible vertical GaN PiN diodes were fabricated. The devices investigated in this work are based on 8 um drift layer thickness to achieve? 1.2 kV of voltage blocking. Three different anode doping levels were fabricated on three wafers with the same p-layer thickness, and planar hybrid edge termination. The moderate anode doping level of 1× 10 18 cm? 3 has achieved the highest breakdown voltage of 1.2 kV and its temperature-dependent breakdown behavior proved an avalanche behavior. Furthermore, our electroluminescence displayed the breakdown at the edge of the anode. Our simulation results imply an improvement in the field management with moderate anode doping.