Overview

Daniel M. Fleetwood received his B. S., M. S., and Ph. D. degrees in Physics from Purdue University in 1980, 1981, and 1984. Dan joined Sandia National Laboratories in Albuquerque, New Mexico, in 1984, and was named a Distinguished Member of the Technical Staff in the Radiation Technology and Assurance Department in 1990. In 1999 he left Sandia to accept the position of Professor of Electrical Engineering at Vanderbilt University in Nashville, Tennessee.

In 2000, he was also named a Professor of Physics, in 2001 he was appointed Associate Dean for Research of the Vanderbilt School of Engineering, and in 2003-2020 he served as Chair of the Electrical Engineering and Computer Science Department. Dan is the author of more than 600 publications on radiation effects in microelectronics, 13 of which have been recognized with Outstanding Paper Awards. These papers have been cited nearly 30,000 times (citation h factor = 92, Google Scholar). A recent review article on "Radiation Effects in a Post-Moore World" can be found on IEEE Xplore. In 2009, he received the IEEE Nuclear and Plasma Sciences Society’s Merit Award, which is the society’s highest individual technical honor. Dan is a Fellow of the Institute for Electrical and Electronics Engineers, The American Physical Society, the American Association for the Advancement of Science, and the National Academy of Inventors, and a member of ASEE, Phi Beta Kappa, and Sigma Pi Sigma.