Overview
The Trion Orion II is a Plasma-Enhanced Chemical Vapor Deposition (PECVD) system with a vacuum loadlock that produces silicon-based films on a compact platform. The unique reactor design and triode head upgrade allow film stress control during deposition.
Capabilities
- Available recipes:
- Amorphous silicon (α-Si)
- Hydrogenated amorphous silicon
- Silicon nitride (SiNx)
- Silicon oxide (SiO2)
- Other recipes available upon request
- Process gases:
- Silane (10% SiH4 in He)
- Nitrogen (N2)
- Nitrous oxide (N2O)
- Carbon tetrafluoride (CF4)
- Oxygen (O2)
- Hydrogen (H2)
- Ammonia (NH3)
- Argon (Ar)
- Phosphine (1% PH3 in H2) - Upon request
- Trimethylborane (2% B(CH3)3 in H2) - Upon request
- RF generators: 600 W @ 13.56 MHz (triode for stress control), 300 W @ 100 kHz
- Sample size:
- Maximum: 8 inch (200 mm)
- 4 inch (100 mm) when using graphite carrier plate with milled recess
- Minimum: ~1 cm x 1 cm chip
- Maximum: 8 inch (200 mm)
- Temperature: Up to 450 OC
- Pressure range: Up to 10 Torr
Contact
-
VINSE Cleanroom
Dr. Ben Schmidt, Manager
Dr. Christina McGahan
Megan Dernberger- 111 Engineering Science Building