Electron Beam Lithography (EBL) System

Raith eLiNE

Overview

EBL Image 1
Sputtered vanadium dioxide patches grown on a silicon on insulator (SOI) wafer. Fabricated in the VINSE facilities using the Raith e-Line Electron Beam Lithography System & Imaged in the VINSE facilities using the Zeiss Merlin Scanning Electron Microscope. (Christopher Whittington, Weiss group)

The Raith eLine Electron Beam Lithography system is a SEM0-style instrument that enables high resolution imaging and nanoscale device patterning of standard semiconductor, metal, and dielectric materials. The tool combines high performance, exceptional versatility, and ease of use for both tool and software.

Capabilities

EBL Image 2
30 nm slotted silicon nanoarrays supporting a radiation-less anapole state. Fabricated in the VINSE facilities the Raith e-Line Electron Beam Lithography System. (Ikjun Hong, Ndukaife group)
  • Emission source: thermal field-emission tungsten coated with Zirconia
  • Writing current: 5 pA-20 nA
  • Operating voltage: 0.1 kV to 30 kV
  • Aperture sizes: 7.5, 10, 20, 30, 60, 120 μm
  • Beam size: 2 nm at 20 kV at 3 mm working distance
  • Detectors:
    • SE2 (secondary electron detector)
    • In-Lens
  • Chamber optical camera
  • Sample size:
    • Holder has clips for up to 6 20 mm x 20 mm samples simultaneously
    • Maximum sample size: 1 3 inch diameter wafer
    • Maximum sample height: <11 mm
  • Write field size: 5 μm to 2 mm
  • Precision stage controller
  • Minimum feature size: < 20 nm dependant on column parameters, sample and resist type
  • Airlock for quick sample exchange (~8 minutes)
  • High Speed (2.5MHz) pattern generator
  • Laser Interferometer for metrology and height corrections
EBL Raith System
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Contact

  • VINSE Cleanroom

    VINSE Cleanroom

    Dr. Ben Schmidt, Manager

    Dr. Christina McGahan
    Megan Dernberger

    • 111 Engineering Science Building

Get Access

Vanderbilt User Access
External User Access