Overview
The Oxford PlasmaPro 100 Cobra is a versatile dry etch tool for deep silicon etching using Bosch or cryogenic processes, as well as fluorine- and chlorine-based etching of silicon, III-V semiconductors, and dielectrics. An inductively-coupled plasma (ICP) source creates a high density of reactive species, while ion energy can be controlled separately using the RIE source.
Capabilities
- Process gases: C4F8, CHF3, (CF4 - Upon request), SF6, O2, N2, Ar, Cl2, (BCl3 - Upon request)
- ICP generator: 3000 W @ 13.56 MHz
- RIE generator: 300 W @ 13.56 MHz
- Mechanical clamp with helium backside cooling
- Substrate temperature: 0 oC to 40 oC (Chiller mode), -150 oC to +400 oC (LN2 mode)
- Substrate size: Up to 100 mm diameter (4 inch)
- Endpoint detection: Optical emission spectroscopy (OES), laser interferometry
Contact
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VINSE Cleanroom
Dr. Ben Schmidt, Manager
Dr. Christina McGahan
Megan Dernberger- 111 Engineering Science Building