Mahmud Reaz earned his Ph.D. in Interdisciplinary Materials Science Program at Vanderbilt University in July 2021 under the supervision of Prof. Ron Schrimpf . Mahmud studied the fabrication, characterization, and simulation of materials and devices from a reliability standpoint. His research empowered reliability analysis of the semiconductor devices, ICs, components, and SOCs through combining device design and characterization data with the theories on the physical mechanisms for failure. He collaborated with experts to bring together the knowledge related to physics, semiconductors, fabrication processes, and quantum phenomena to develop a semiclassical transport model for device simulation. His recent publications revealed the barriers in scaling gate-all-around Si technology while investigating pathways for the hot-electron-induced degradation in mainstream electronic devices and ICs. Mahmud is currently working as a research scientist in Microchip Technology Inc. ⸻ studying the reliability aspect of the FPGA design and validation.